Product Summary

The MG200Q2YS40 is a TOSHIBA GTR module with silicon N channel IGBT. It is sutiable for high power switching applications and motor control applications.

Parametrics

MG200Q2YS40 maximum ratings: (1)Collector-emitter voltage, VES: 1200V; (2)Gate Emitter voltage, VGES: ±20V; (3)Collector current DC, IC: 200A; (4)Collector current 1ms ICP: 400A; (5)Forward current DC, IF: 200A; (6)Forward current 1ms IFM: 400A; (7)Collector power dissipation(Tc=25℃) PC: 1300W; (8)Junction temperature Tj: 150℃; (9)Storage temperature range Tstg: -40 to 125℃; (10)Isolation voltage, VIsol: 2500(AC 1 minute)V; (11)Screw torque(Terminal/Mounting): 3/3Nm.

Features

MG200Q2YS40 features: (1)High input impedance; (2)High speed; (3)Low saturation voltage; (4)Enhancement mode; (5)Includes a complete half bridge in one package; (6)The electrodes are isolated from case.

Diagrams

MG200Q2YS40 dimensions

MG2000
MG2000

Other


Data Sheet

Negotiable 
MG2001
MG2001

Other


Data Sheet

Negotiable 
MG2002
MG2002

Other


Data Sheet

Negotiable 
MG2004
MG2004

Other


Data Sheet

Negotiable 
MG200J6ES60
MG200J6ES60

Other


Data Sheet

Negotiable 
MG200J6ES61
MG200J6ES61


IGBT MOD CMPCT 600V 200A

Data Sheet

0-1: $147.34