Product Summary

The 2N3632 is a silicon Epitaxial NPN Planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. The 2N3632 is intended for class A, B, or C amplifier, oscillator or frequency multiplier circuits and are specifically designed for operation in the VHF-UHF region.

Parametrics

2N3632 absolute maximum ratings: (1)VCBO, Collector to Base Voltage: 65 V; (2)VCEO, Collector to Emitter Voltage: 40 V; (3)VEBO, Emitter to Base Voltage: 4.0 V; (4)IC(max), Continuous Collector Current: 3.0 A; (5)PD Total Dissipation at 25℃ stud: 23.0V; (6)Tj Junction Temperature: 200℃; (7)Tstg Storage Temperature: -65 to 150℃.

Features

2N3632 features: (1)Frequency 130 to 400MHz; (2)Voltage: 28V; (3)Power out: 2.5 to 13.5W; (4)High power gain; (5)High efficiency; (6)Class transistors; (7)Common emitter.

Diagrams

2N3632 diagram

2N3634
2N3634

Other


Data Sheet

Negotiable 
2N3635
2N3635

Central Semiconductor

Transistors Bipolar (BJT) PNP Ampl/Switch

Data Sheet

0-500: $2.48
500-1000: $2.30
1000-2000: $2.02
2N3635L
2N3635L

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Data Sheet

Negotiable 
2N3636
2N3636

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Data Sheet

Negotiable 
2N3637
2N3637

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Data Sheet

Negotiable 
2N3637CSM
2N3637CSM

Other


Data Sheet

Negotiable